pulse test 300 s, duty cycle. 2% m b t 5 4 0 1 MBT5401 silicon p-n-p high-volt age transistor type sot-23 1. base 2. collector 3. emitter color code black marking MBT5401 absolute maximum ra tings symbol min. t p v v v i t j tot cbo ceo ebo c stg 55 descriptions storage t emperature junction t emperature maximum power dissipation (t a=25 ) maximum collector to base v oltage maximum collector to emitter v oltage maximum collector current maximum emitter to base v oltage c max. typ. unit 150 250 500 160 150 5 150 mw v v v ma c c electrical characteristics ta 25 c ( ) descriptions max. unit 240 dc current gain symbol h h h fe3 fe2 fe1 typ. min. 50 50 60 t est conditions v i ce c 5v, 1ma v i ce c 5v, 10ma v i ce c 5v, 50ma 50 collector cut-off current output capacitance 8.0 p c f ob 50 ua ua i cbo gain bandwidth product 100 mhz f t v v cb amb 120v, i e 0ma v cb 10v, i f t e 0ma, 1mhz 150 c cb 120v, i e 0ma, v ce 10v, i c 10ma 2l MBT5401 marking p / n thermal characteristics r th j-a 500 k/w thermal resistance at t p r +r +r +t ( ) j th j-t th t-s th s-a amb symbol descriptions max. min. typ. unit tel:(852)23413351 fax:(852)27978275 web site:http://www.daiwahk.com v ce sat ( ) f 1khz v cb 10v, i e 1ma, v v v collector to base breakdown voltage collector to emitter breakdown voltage 160 150 v ( ) v be sat 0.5 1 v v v collector saturation voltage 0.2 1 base saturation voltage i c 100ua i e 0 i c 1ma, i b 0 i c 50ma, i b 5ma i i c 50ma, i b 5ma i c 10ma, i b 1ma c 10ma, i b 1ma small-signal current gain 200 h fe emitter to base breakdown voltage 5 40 bv bv bv ebo cbo ceo i c 0ma, i e 10ua 1 2 3
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